Temperature's effect on MTTF (Source: Fujitsu Ltd.)
Fujitsu's GaN transistors will work at 200 degrees Celsius for over a century

At the 2007 IEEE MTT-S International Microwave Symposium (IMS), Fujitsu Laboratories announced the development of a new technology that enables the transistors to operate at 200 degrees Celsius for more than one million hours – equivalent to over 100 years.

Fujitsu’s technology utilizes high power gallium nitride (GaN) high electron-mobility transistors (HEMT), and is applicable towards high-speed wireless communications market, such as for satellite communication (VSATs), cellular base stations, WiMAX base stations, and other high-speed wireless communications infrastructure.

As wireless communication data-rates continue to become increasingly faster, power consumption in base stations – such as those for mobile phones – is also increasing. GaN HEMT are ideal for such uses not only for their lower power consumption, but also their reliability in high power, high voltage-endurance devices and harsh usage conditions.

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