At the 2007 IEEE MTT-S International Microwave Symposium
(IMS), Fujitsu Laboratories announced
the development of a new technology that enables the transistors to operate at 200 degrees Celsius for more than one million hours – equivalent to
over 100 years.
Fujitsu’s technology utilizes high power gallium nitride (GaN) high
electron-mobility transistors (HEMT), and is applicable towards high-speed
wireless communications market, such as for satellite communication (VSATs),
cellular base stations, WiMAX base stations, and other high-speed wireless
As wireless communication data-rates continue to become
increasingly faster, power consumption in base stations – such as those for
mobile phones – is also increasing. GaN HEMT are ideal for such uses not only
for their lower power consumption, but also their reliability in high power,
high voltage-endurance devices and harsh usage conditions.