Samsung has announced that it is the first company to begin
mass production of 16Gb NAND flash memory. The new 51 nanometer (nm) memory is
based on a multi-level cell (MLC) structure and is 60 percent more efficient
than its 60nm counterpart.
"In rolling out the densest NAND flash in the world, we
are throwing open the gates to a much wider playing field for flash-driven
consumer electronics," said Jim Elliott, Samsung Semiconductor's director for
flash marketing. "To minimize production costs and improve performance, we
have applied the finest process technology a ‘half generation’ ahead of the
industry, which is introducing 55nm and higher."
The 51nm NAND flash memory chips are also as much as 80
percent faster than current 60nm MLC-based products. The new MLC design offers
read speeds of 30MB/sec and write speeds of 8MB/sec as opposed to 17MB/sec and
4.4MB/sec for the previous generation.
The 16Gb NAND chips will be used in devices offering up to
16GB of storage space in a single package. Samsung will target digital memory
cards, MP3 players and cell phones with its new high capacity 51nm 16Gb NAND
Samsung will also offer a new suite of flash software to
allow cell phones and MP3 players to take advantage of 4KB pages instead of the
2KB pages now used with 60nm NAND flash memory. The memory chips will also
support 4-bit error-correcting code (ECC).
"As the demand for video content grows stronger by the
day, products that feature extended recording time of high-resolution video
footage, including mid-to-high-range digital cameras, will particularly benefit
from the high capacity and performance of 16Gb NAND flash memory," Samsung
said in a press statement.