Print 45 comment(s) - last by Spyvie.. on Mar 12 at 3:58 PM

Phase change memory wafer manufactured at 90nm
Intel claims it will mass produce phase change memory before the end of 2007

This week Intel privately shared parts of its roadmap for memory technologies through 2008. Intel’s progress on phase-change memory, PCM or PRAM, will soon be sampled to customers with mass production possible before the end of the year.

Phase-change memory is positioned as a replacement for flash memory, as it has non-volatile characteristics, but is faster and can be scaled to smaller dimensions. Flash memory cells can degrade and become unreliable after as few as 10,000 writes, but PCM is much more resilient at more than 100 million write cycles. For these reasons, Intel believes that phase-change memory could one day replace DRAM.

“The phase-change memory gets pretty close to Nirvana,” said Ed Doller, CTO of Intel’s flash memory group. “It will start to displace some of the RAM in the system.”

For its implementation of phase-change memory, Intel has since 2000 licensed technology from Ovonyx Inc.. The Ovonyx technology uses the properties of chalcogenide glass, the same material found in CD-RW and DVD-RW, which can be switched between crystalline and amorphous states for binary functions.

Every potential PCRAM memory maker thus far licenses Ovonyx technology. According to Ovonyx’s Web site, the first licensee of the technology was Lockheed Martin in 1999, with Intel and STMicroelectronics in the following year. Four years after that, Nanochip signed an agreement.  Elpida and Samsung were the next two in 2005, and Qimonda marks the latest with a signing this year.

IBM, Macronix and Qimonda detailed last December its recent developments on phase-change memory. Researchers at IBM’s labs demonstrated a prototype phase-change memory device that switched more than 500 times faster than flash while using less than one-half the power to write data into a cell. The IBM device’s cross-section is a minuscule 3 by 20 nanometers in size, far smaller than flash can be built today and equivalent to the industry’s chip-making capabilities targeted for 2015.

Intel’s initial phase-change technology, however, is already a reality, as the chipmaker revealed that it has produced a 90 nanometer phase-change memory wafer. At the 90 nanometer process size, the power requirements to write are approximate to that required for flash. Intel said that its early test work shows data retention abilities of greater than 10 years even at temperatures of 85 degree Celsius.

Intel touts PCM as a “new category of memory,” as its attributes are distinctly different, and typically superior to many of the memory technologies today as it combines the best attributes of RAM, NOR and NAND. Intel wouldn’t give a firm date on the availability of its phase-change memory as several details still need to be finalized after the sampling process.

“We're going to be using this to allow customers to get familiar with the technology and help us architect the next generation device.” Doller said. “We're hoping we can see [mass] production by the end of the year, but that depends on the customers.”

Comments     Threshold

This article is over a month old, voting and posting comments is disabled

RE: Promising
By Hoser McMoose on 3/11/2007 1:42:13 PM , Rating: 2
And let's not forget.. Itanium's potential as an architecture was never its problem. The problem

Let's see, the Itanium was designed to minimize transistor use at a time when transistor count was quickly becoming a less important factor. It was designed to use a simple and elegant instruction set that ended up being neither simple or elegant. It was supposed to fix problems that didn't yet exist at the expense of not breaking a major issue (good backwards compatibility) that DID exist.

I suppose you could argue that a lot of these failures were more due to the implementation of the architecture rather then it's basic ideas, but to say that Itanium failed JUST because of "apathy" is 100% false.

Itanium is purely an example of something that looks good on paper, but when you take a really good look at ask the hard questions, it weaknesses become readily apparent. This was true as far back as the late 90's and it hasn't improved any.

It remains to be seen if the same is true with this memory or not. Again it looks good on paper, but there are still some hard questions that need to be asked. The key is how fast is the memory, how dense is it and especially how expensive. Those three factors will help determine whether or not it has a place in the computer industry and just what the place will be. Fortunately Intel does seem to be in the process of trying to answer these questions, so perhaps by the end of the year we'll have some more concrete information.

RE: Promising
By zsdersw on 3/11/2007 3:07:33 PM , Rating: 2
Show me where I said anything about Itanium's situation being the result of "just" one thing or another.

"We don't know how to make a $500 computer that's not a piece of junk." -- Apple CEO Steve Jobs
Related Articles
Solid-state Drives Ready for Prime Time
November 15, 2006, 3:45 PM

Copyright 2016 DailyTech LLC. - RSS Feed | Advertise | About Us | Ethics | FAQ | Terms, Conditions & Privacy Information | Kristopher Kubicki