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IBM to enlist high-k metal gate technology with its 45nm chips

Alongside Intel’s news of 45nm process technology, IBM today announced its own 45nm technological advancements that apply to products manufactured in its East Fishkill, NY plant starting in 2008.

Working with AMD and its other development partners including Sony and Toshiba, IBM has found a way to construct a critical part of the transistor with high-k metal gates, that substitutes a new material into a critical portion of the transistor that controls its primary on/off switching function. The material provides superior electrical properties compared to its predecessor, silicon dioxide, enhancing the transistor's function while also reducing leakage.

As important as the new material is the method for introducing it into current manufacturing techniques. The creation of this transistor component with the new material was accomplished by the IBM team without requiring major tooling or process changes in manufacturing - an essential element if the technology is to be economically viable.

“Until now, the chip industry was facing a major roadblock in terms of how far we could push current technology,” said Dr. T.C. Chen, vice president of Science and Technology, IBM Research. “After more than ten years of effort, we now have a way forward. With chip technology so pervasive in our everyday lives, this work will benefit people in many ways.”





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