Tunneling Transistors Creep Near, Could Replace MOSFETs
January 31, 2013 7:10 PM
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Long-standing device gets a nanotechnology boost
It's taking a dive into
, but the III-V tunneling field effect transistor (TFET) is finally creeping close to the widely used metal-oxide-semiconductor field effect transistor (MOSFET).
III-V TFETs are a three terminal extension of the tunneling diode, a device invented in 1957, which earned inventor Leo Esaki a Nobel Prize in Physics. Nicknamed the "Esaki transistor/diode" in his honor, the device went largely overlooked due to low driving currents in most applicable materials.
But a team led by electrical engineering professor
Rochester Institute of Technology
(RIT) has tuned the transistors to approach MOSFET performance. A key to the tuning was the work of graduate researcher David Pawlik who grew sub-120 nanometer vertical TFETs on a test chip that allow hundreds of diodes to be tested per sample. The research allowed multiple kinds of homojunction and heterojunctions to be tested.
Working with fellow graduate researchers Brian Romanczyk and Paul Thomas, as well as collaborators at
(a non-profit research consortium backed by top chipmakers) and
Texas State University
, the team recorded a record peak current density of 2.2 MA/cm^2.
The benefit of the III-V TFET is that they operate at a much lower voltage than MOSFETs and thus consume less watts of power. The record setting design ran at -0.3 V.
As its name implies, a tunneling FET is similar voltage wise to driving through a hill, instead of down one, says Professor Rommel. [Image Source: NCWpics]
Professor Rommel likens the traditional MOSFET to driving down a hill, voltage-wise, while the TFET, driven by quantum effects, is more like digging a tunnel through the hill. He
on the record current levels, "The tunneling field effect transistors have not yet demonstrated a sufficiently large drive current to make it a practical replacement for current transistor technology, but this work conclusively established the largest tunneling current ever experimentally demonstrated, answering a key question about the viability of tunneling field effect transistor technology."
He suggests in the paper that a peak current of 10 MA/cm^2 should be possible with high levels of doping in
The results could be applied in everything from smartphones to solar cells. Professor Rommel suggests tuned TFETs could reduce processor power consumption by a factor of 10, allowing longer battery life for phones and other devices.
The work was presented at a December at the
International Electron Devices Meeting (IEDM)
in San Francisco, Calif. The work was funded by
The National Science Foundation
(NSF), SEMATECH, and RIT's Office of the Vice President of Research.
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RE: Back in the dark ages
2/1/2013 1:43:22 PM
I'm doing my PhD in a related field. While I don't work directly on transistors (I work on III-V nanowires), I am exposed to plenty of research of those who do so I thought I'd weigh in here.
If I had to guess, I think large companies like Intel, IBM, AMD, ect. will be banking on the introduction of optical interconnects to somewhat extend Moore's Law as they run out of room at the bottom for silicon, which should happen ~2020. When they can no longer shrink their transistors and take advantage of traditional Moore's law scaling, they will need to turn to either a different material than silicon or introduce different enhancements not related to transistor scaling.
While a shift to a different material is inevitable, I think silicon photonics is a much more mature field than new emerging materials, like graphene. Furthermore, silicon photonics does not create the need for radically new manufacturing equipment or processes. If you think about it, companies like Intel have built their entire empire on silicon and the amount of expertise that has been developed around it will not be easily abandoned.
The 2020s will be a fascinating time for the integrated circuit industry - and while we all hope the transition from Moore's Law to whatever else follows has been meticulously planned, I wouldn't be surprised if it is a rather disruptive time in the industry. If you think about it, when Intel is the first to run into what I like to call "Moore's Wall" (I'm sure I didn't invent that term), Intel could lose their all-so-important manufacturing process lead in less than a decade from now! Be the first to be able to mass manufacture a modern CPU out of graphene and Intel's lithography advantage would mean squat!
Anyway, I imagine optical interconnects and perhaps more active optical components will be gradually introduced in the coming years; however, the silicon MOSFET will be the bleeding edge for the vast majority of electronics for at least another decade, if not several more. It would certainly be a healthy sign if upcoming designs like Haswell showed some sort of progress on the optical interconnect front.
The future is very exciting!
RE: Back in the dark ages
2/2/2013 4:08:38 PM
Thanks. Very useful information, since I'm asking the question because I'm thinking of doing a masters in Photonic/optronic Engineering. Naturally to engineer something you need to have the fundamental research already done and sorted. So I'm hoping that I'd have niche applications to work on at first and then as time goes on it becomes a bit more mainstream.
Maybe in 15 years time they can build a simple all-optical processor running at like 500GHz. Who knows. Maybe not, Epic Fail.
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