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Memory will help smartphones boot quicker, save a bit of power

Micron Technology Inc. (MU) endured a rocky 2011, with plunging DRAM prices and the tragic death of long-time CEO Steven Appleton in a plane crash.  Appleton was replaced by Mark Durcan.

This year the Boise, Idaho-based company shows signs of bouncing back.  In May it unveiled DDR4 samples to counter Samsung Electronics Comp., Ltd.'s (KSC:005930) currently sampled designs.  The company also announced its plan to acquire Tokyo-based DRAM maker Elpida Memory, Inc. for $2.5B USD.

I. Micron Air Commercial PCM -- an Industry-First

Now the rebound continues with Micron beating Samsung to the punch, becoming the first to release commercial phase-change memory (PCM).

Phase-change memory is a new kind of storage chip, which offers a superior alternative to the tradition silicon-based NAND flash storage.  PCM is built on chalcogenide glass -- glass that contains one or more of the chalcogenide (sulfur, selenium or tellurium) elements.  When heated, the glass switches from crystalline to amorphous, altering electrical properties.  Modern PRAM also adds two intermediate states, making for four-states per cell.

Micron's phase-change memory will no doubt be pricey, but it promises high volume and a slew of benefits.  It boasts that the memory will cut smartphone boot times, improve application response times (by cutting latency), and even yield small power savings.  The memory is not a major power consumer, so these gains likely will amount to minutes of extra battery life, not hours.

Micron phase change
Micron's phase-change memory is incorporated into a 2-chip design, which incorporates both LPDDR2 volatile memory and PCM non-volatile memory.

Micron is offering its PCM as an all-in-one volatile/non-volatile solution, solution that includes a 1-gigabit PCM chip attached to a 512-Mbit LPDDR2 chip, connected by a custom interface inside a single package.

Tom Eby, Vice President of the Wireless Solutions Group at Micron comments, "Our commitment to innovation and continued development of advanced products to address the voracious demands of the wireless industry is clear and strong.  We are determined to evolve and innovate by continuing to offer the best-tailored solutions for both today's and tomorrow's market requirements." 

The new memory will be built on a 45 nm process.

II. Other Solutions Near Market

The only other driving concern (other than price) when it comes to PCM is sensitivity to temperature.  Given the high temperatures found in many mobile devices, Micron's solution will likely face a tough test to see whether it has worked out these kinks.

Micron may be the first to take the technology commercial, but it's hardly the first to experiment with PCM.  Intel Corp. (INTC), International Business Machines, Inc. (IBM), and Samsung have all sampled PCM chips in recent years.  Phase-change memory is based on the so-called "Ovshinsky effect", a property for quantified and patented by physicist Stanley Ovshinsky in the mid-1960s.

Chalcogenide glass
PCM is built using chalcogenide glass -- a special type of doped glass.
[Image Source: Univ. of Southampton]

The technology is similar to Hewlett-Packard Comp.'s (HPQ) memristor tech.  In fact, some HP Labs research fellows have argued that PCM are memristors, a claim that is debated among industry standard-keepers.


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RE: More useful in PCs
By geddarkstorm on 7/18/2012 12:27:32 PM , Rating: 2
Making these into next gen SSDs -is- the entire prospect. The PRAM is 100x faster than flash storage, and has an endurance in the millions of writes unlike flash's thousands. It can also store 4 bits of data per cell, instead of two if you're using MLC flash. You can read some here: http://www.engadget.com/2011/06/30/embargo-ibm-dev...

PRAM may eventually allow us to have non-volatile RAM memory with some more improvements (a recent breakthrough as increased its speed by 10x to 100 picosecond latency for writes), which would make SSDs and DRAM completely obsolete. You can read about that here: http://www.engadget.com/2012/06/23/phase-change-me... (realized that DDR4 will start at 1.6 gigahertz in speed)

IBM are the people who developed this, and it's been a few years in the making. Incredible seeing it finally come out now. It really could bring a paradigm shift to our computing world.


RE: More useful in PCs
By Fritzr on 7/18/2012 3:31:34 PM , Rating: 2
Engadget needs to edit their article. In the Press Release they say the same thing Daily Tech does "4 Levels" which equates to 2 bits of storage.

From the press release.
quote:
In addition, depending on the voltage, more or less material between the
electrodes will undergo a phase change, which directly affects the cell's
resistance. Scientists exploit that aspect to store not only one bit, but
multiple bits per cell. In the present work, IBM scientists used four
distinct resistance levels to store the bit combinations "00", "01" 10" and
"11".


RE: More useful in PCs
By geddarkstorm on 7/19/2012 12:34:17 AM , Rating: 2
Honestly that makes a lot more sense too!


RE: More useful in PCs
By EricMartello on 7/19/2012 12:53:19 AM , Rating: 2
Yeah, along with a unified PCI Express interface which replaces all the other internal/external interfaces, would make for some sleek, efficient computers. It should also drive the cost:performance ratio down substantially.


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