When it comes to development in memory technology, Samsung
is a company that never sleeps. In October, Samsung showed of its first 50nm DRAM chip, in
early November the company announced the development of a 16-chip multi-chip
package (MCP) for memory and just two weeks ago it announced new high-speed
for use in mobile devices.
Samsung continues to make advances in the memory market and
today has announced a new revolution in the mobile DRAM market. The company has
developed new low-power
1Gb DRAM chip for use in mobile applications.
The new 1Gb DRAM is built on Samsung's 80nm process
technology allowing it to be 20% thinner than 512MB double-stack 1Gb packages.
The 1Gb DRAM chip also takes advantage of a temperature-sensing feature to
maximize the efficiency of the self-refresh cycle. This reduces power
consumption in standby mode by up to 30%.
Samsung expects for the chips to find a home in mobile phone
handsets, digital cameras and a portable gaming devices. The 1Gb DRAM chip will
enter mass production in Q2 2007.