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No matter how many times you click to enlarge, it's still going to be 50nm
Smaller than ever

Samsung Electronics announced today that it has developed the industry’s first 50-nm DDR2 DRAM chip, which will increase production efficiency from the 60nm level by 55 percent. The new 1-Gb DRAM incorporates three-dimensional transistor design and multi-layered dielectric technology, which Samsung says will greatly enhance performance and data storage capabilities.

“With the 50nm DRAM development, we’re continuing our technology leadership, paving the way for our customers to reap not only greater cost efficiencies but also to make superior products,” said Nam Yong Cho, executive vice president of memory sales & marketing at Samsung Electronics’ Semiconductor business.

According to Samsung, the key to the production efficiencies in the newly developed 50nm process is the use of a selective epitaxial growth transistor (SEG Tr). This 3D transistor has a broader electron channel that optimizes the speed of each chip’s electrons to reduce power consumption and enable higher performance. Continued miniaturization of the overall memory circuit and an increasingly limited area of coverage within a wafer cell make it much harder to secure and sustain sufficient volumes of electrons. Adding to the 50nm design improvements, the SEG transistor introduces a multi-layered dielectric layer (ZrO2/Al2O3/ZrO2) to resolve weak electrical features. The new dielectric layer sustains higher volumes of electron to increase storage capacity, ensuring higher reliability in storing data.

Samsung’s new 50nm process technology can be applied to a broad range of DRAM chips including graphics and mobile DRAM. Mass production is slated for 2008.

Another advancement in DRAM was announced from Micron less than a month ago. Rather than shrinking the process, Micron concentrated on ramping up the speeds to develop DDR3 products supporting data rates of 800 MT/s to 1,600 MT/s. Outside of DRAM, Samsung announced in September that it is currently researching Phase-change Random Access Memory, which is expected to replace current NOR flash memory technology.





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DIP Packaging
By TomZ on 10/19/2006 12:29:27 PM , Rating: 5
And in other news, Samsung has announced that all new memory products will be packaged in DIP packages. Samsung believes that SMT packages are overrated, and that new products are getting too small. In addition, Samsung believes that DIP packages will appeal to those who started working with electronics in the 1970's and early 1980's, and it will appeal to their vintage/classic aesthetic.

j/k - I know this is a prototype, not for production.




RE: DIP Packaging
By saratoga on 10/19/2006 1:20:41 PM , Rating: 1
lol

I do like how their super advanced prototype looks like a 16k EEPROM from 1988.


RE: DIP Packaging
By stephenfs on 10/19/2006 7:01:10 PM , Rating: 2
I thought it was a funny pic too, especially to show off 50nm tech. Although to be fair, I work in semicon, and pretty much every part we make first goes into a DIP for engineering evaluation, not that we would advertise that on the web.


Exciting
By PAPutzback on 10/19/2006 12:09:16 PM , Rating: 2
Is this is strictly system RAM or will the same process help out flash memory. I am still waitng for the reviews on Hybrid drives for use with VISTA in desktop PCs. It seems like it has been months if not a year since any new breakthrus have been reported. LAst was the Core DUO and before that was PCI-E




RE: Exciting
By TomZ on 10/19/2006 12:30:30 PM , Rating: 2
I don't see any direct relationship between this and flash, and besides, the technology node that current flash uses is not a factor at all in the deployment of hybrid hard drives.


Newer innovations
By vtohthree on 10/20/2006 4:23:37 AM , Rating: 2
Either way, it's good to see that companies are not at rest or at a complacent state. If you ask me, Samsung has been getting a lot of news lately for technologies of the future, or production improvements they are working on.

The list can go on, push for DDR3 and DDR4, phase change ram, 3D transitors, and newer high capacity flash chips(64GB solid state).

Though people complain or are quick to assume that it's just paperware, it is coming out, I remember just a few months ago 3D transitors were announced by Samsung(and here on DT), shortly after it was seen in shelves(purchaseable).

Anyways, in conclusion this should spur some aggressive competition. I don't see too many companies in this specific field as aggressive as Samsung(in trying to press semi-conductors and the related) right now, but EVENTUALLY we will, and it will continue the TECHNOLOGY growth. Samsung has been running like crazy even though nothing's after them. Just wait towards the middle of DDR3's release, by then companies will have recieved their compensationn and finally we can see price drops for these goodies.




YES!!!
By drewsup on 10/20/2006 12:01:03 PM , Rating: 2
Samsung freakin rules right now, dont they. My Sammy DLP TV is AMAZING,(not that i'm a fanboy oor anything). They are what Sony was.




Now Maybe They Can Stop Price Fixing
By D22 on 10/19/06, Rating: -1
By vtohthree on 10/20/2006 4:13:21 AM , Rating: 2
Big correction there buddy... they are not price fixing, yes, in the past the big names were guilty of it(Infineon/Samsung), but thats old news.

If you've been following up, you would've known that all ram prices across the spectrum were due to rise...samsung is not the only maker of DDR(2) ram, Hynix, Micron, Infineon, and Samsung(and others as well) were all burdened by the recent lawsuit from rambus(don't get me started, there's another expert who can argue better why this lawsuit was bogus to begin with...)

HENCE, all companies/manufacturers raised prices for production in order to compensate(obviously).



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