Samsung 512GB Toggle-mode NAND SSD  (Source: Samsung)
Mass production to start next month

Samsung has announced a new 512GB SSD that uses Samsung's toggle-mode DDR NAND memory and is aimed at the premium notebook market. The company claims that the SSD is good for random write operations of 250MB/s and random read operations of 220MB/s.

However, outright speed isn't all Samsung is claiming with the new SSD. Samsung's new NAND chips can operate at either 3.3V or 1.8V and according to Samsung, the specially designed low-power controller for its toggle-mode NAND allows a notebook using the new SSD to last an additional hour or longer per charge.

“The highly advanced features and characteristics of our new SSD were obtained as a direct result of an aggressive push for further development of our NAND flash technology, our SSD controller and our supportive SSD firmware,” said Dong-Soo Jun, executive vice president, memory marketing, Samsung Electronics. “Early introduction of this state-of-the-art toggle DDR solution will enable Samsung to play a major role in securing faster market acceptance of the new wave of high-end SSD technology,” he added. 

The SSD is built using 30nm-class 32Gb chips and includes support for 256-bit AES data encryption. The drive also supports streamlined boot time and application access, features that Samsung says increases random performance by a factor of nine compared to traditional HDDs. The Windows 7 TRIM command is of course supported.

Volume production of the 512GB SSD will start next month at an undisclosed price (likely because the drives will mainly be featured in OEM systems).

"When an individual makes a copy of a song for himself, I suppose we can say he stole a song." -- Sony BMG attorney Jennifer Pariser
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