quote: How can FeRAM not be listed as just as good as MRAM for endurance? I've used FeRAM in designs that require constant non-volatile writes, and while the density is really low you can't beat 10^14+ write cycles. It basically removes write endurance from the equation, even writing to the same address 1000 times a second it would be rated for thousands of years.
quote: resistance is controlled by current, which causes a directional drift in Oxygen electron vacancies. After enough current, enough of the vacancies shift to reach a steady state resistance in a certain direction. The device can be "read" by checking the voltage at low current (V=iR), while the data (the resistance value) can be set by applying a current to either increase the resistance towards the maximum or a reverse current to decrease it.